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Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N

Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N

  • Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
  • Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
Product Details:
Place of Origin: CHINA
Brand Name: IOR
Certification: ROHS
Model Number: IRFZ44NPBF
Payment & Shipping Terms:
Minimum Order Quantity: 50pcs
Price: negotiate
Packaging Details: 50PCS/Standard Package
Delivery Time: 2-3 working days
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
Contact Now
Detailed Product Description
FET Type: N-Channel Drive Voltage: 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
High Light:

high power mosfet transistors

,

n channel mosfet transistor

,

N Channel Power Mosfet 55V 49A

IRFZ44N N-Channel POWER MOSFET 55V 49A 94W Through Hole TO-220

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts.

The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

Features

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

 

Product Attributes

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
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Contact Details
Shenzhen Koben Electronics Co., Ltd.

Contact Person: Mr. Zhu

Tel: 86-13040862868

Fax: 86-755-23816038

Send your inquiry directly to us (0 / 3000)

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